Draft:Avalanche Technology
Submission declined on 21 December 2025 by MelbourneIdentity (talk).
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Submission declined on 10 September 2025 by Pythoncoder (talk). This draft appears to contain text generated by a large language model (such as ChatGPT). You cannot use LLMs to generate article content.
Declined by Pythoncoder 8 months ago.LLM-generated pages with certain obvious signs of being machine generated may be deleted without notice. These tools are prone to specific issues that violate our policies:
Instead, only summarize in your own words a range of independent, reliable, published sources that discuss the subject. See the advice page on large language models for more information. | |
Company type | Private |
|---|---|
| Industry | Semiconductors |
| Founded | 2006 |
| Founder | Petro Estakhri |
| Headquarters | Fremont, California , United States |
| Products | Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) |
| Website | www |
Avalanche Technology is an American semiconductor company headquartered in Fremont, California, that develops spin-transfer torque magnetoresistive random-access memory (STT-MRAM).[1][2] The company's devices target high-reliability applications, including aerospace.[3][4]
History
Avalanche Technology was founded in 2006 by Petro Estakhri as Yadav Technology before being renamed.[1] In 2015, the company began sampling 32-Mbit and 64-Mbit standalone STT-MRAM devices with a serial peripheral interface, manufactured on a 55 nm process using perpendicular magnetic tunnel junctions (pMTJ).[2]
In 2016, the company raised $23 million in a funding round that included Thomvest Ventures, Vulcan Capital, and Rogers Venture Partners.[5]
A 2020 NASA report detailed radiation testing on one of the company's 40 nm MRAM devices for total ionizing dose effects in space environments.[6]
In 2024, Avalanche introduced an enhanced "Space Grade-E" discrete MRAM family with densities from 1 Gb to 8 Gb, aimed at aerospace and defense applications with improved radiation tolerance and screening.[3][4]
References
- ^ a b LaPedus, Mark (April 8, 2009). "Startup enters STT-MRAM race". EE Times. Retrieved December 16, 2025.
- ^ a b Hilson, Gary (July 13, 2015). "Avalanche Samples Spin Transfer Torque Magnetic RAM". EE Times. Retrieved December 16, 2025.
- ^ a b Benson, Duane (August 5, 2024). "Micron, SK Hynix, and Others Debut Memory Firsts Ahead of Storage Show". All About Circuits. Retrieved December 16, 2025.
- ^ a b "Avalanche Technology introduces enhanced MRAM for space and defence". New Electronics. July 30, 2024. Retrieved December 16, 2025.
- ^ "Funding Snapshot: Nonvolatile Memory Technology Developer Avalanche Technology Raises $23M". WSJ Pro Venture Capital Dispatch. February 2, 2016. Retrieved December 16, 2025.
- ^ Wilcox, T. (February 5, 2020). Avalanche ASV016204 (Pre-Production Samples) 40 nm MRAM Total Ionizing Dose Test Report (Report). NASA Goddard Space Flight Center. Retrieved December 16, 2025.
External links
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